Beam energy purity in the Eaton NV-8200P ion implanter-Reference-Cited by-同舟云学术

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Beam energy purity in the Eaton NV-8200P ion implanter

Published:1995-03 Issue:1-2 Volume:96 Page:13-17
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kamenitsa Dennis E.,Rathmell R.D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. High energy ion implantation for C-MOS isolation n-wells technology: Problems related to the use of multicharged phosphorous ions in an industrial context

2. Low dose monitors — the movements and causes

3. Control of BF2 dissociation in high-current ion implantation

4. Energetic neutral contamination in modern high-current implanters

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optima MDxt: A high throughput 335 keV mid-dose implanter;AIP Conference Proceedings;2012

2. Ion implantation for silicon device manufacturing: A vacuum perspective;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-05

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