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ULSI-process demands of contamination control on ion implantation

  • Published:1995-03 Issue:1-2 Volume:96 Page:62-67
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Natsuaki Nobuyoshi,Kamata Tadashi,Kondo Kaori,Kureishi Yoshinori

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

1. Ext. Abst. Int. Symp. on Semiconductor Manufacturing Technology;Ohmi,1992

2. Ext. Abst. Int. Symp. on Semiconductor Manufacturing Technology;Komiya,1992

3. Ext. Abst. Int. Symp. on Semiconductor Manufacturing Technology;Chatterjee,1992

4. Technical Digest Int. Electron Devices Meeting;Ono,1993

5. On a composite model to the IC yield problem

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved determination of phosphorus contamination during ion implantation by SRP and simulations;Applied Surface Science;2009-06

2. Ion Implantation;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

3. Ion beams in silicon processing and characterization;Journal of Applied Physics;1997-05-15

4. Thermal Oxidation of (100) Silicon in  O 2 and  CO 2 and Its Effect on the SiO2 ‐ Si Metal Oxide Semiconductor Parameters;Journal of The Electrochemical Society;1997-03-01

5. Effects of carbon implantation on generation lifetime in silicon;Applied Physics Letters;1996-01-22
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