Improved determination of phosphorus contamination during ion implantation by SRP and simulations

Author:

Kuruc M.,Hulényi L.,Kinder R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. ULSI-process demands of contamination control on ion implantation;Natsuaki;Nucl. Instr. Methods,1995

2. Enhanced diffusion effects and dopant cross-contamination in ion implanted surfaces in semiconductor silicon;Larson;Electrochemical Soc. Proc.,1986

3. Ultra-pure processing: A key challenge for ion implantation for fabrication of ULSI devices Ion beam processing of advanced electronics materials.;Current;Mater. Res. Soc. Proc.,1989

4. VLSI Technology;Sze,1988

5. In-fab. techniques for baselining implant dose, contamination;Santiesteban;Solid State Technol.,2002

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