Author:
Ito H.,Kamata T.,England J.,Fotheringham I.,Plumb F.,Current M.I.
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Influence of beam parameters and low-energy electron neutralization on wafer charging during ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
2. Yield Measurement of Secondary Electrons Emitted from Silicon Dioxide Film in Negative-Ion Bombardment;Japanese Journal of Applied Physics;1996-09-15
3. Studies of wafer surface charging using the THOR monitor device;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
4. Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomena;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
5. Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03