The precision implant 9500 plasma flood system — the advanced solution to wafer charging

Author:

Ito H.,Kamata T.,England J.,Fotheringham I.,Plumb F.,Current M.I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Electronic and Ionic Impact;Massey,1969

2. A. Renau, S. Moffatt and F. Plumb, U.S. Patent No. 4825087 (1989).

3. New approaches to charging control

4. Large Ion Beams;Forrester,1988

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3. Influence of beam parameters and low-energy electron neutralization on wafer charging during ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

4. Yield Measurement of Secondary Electrons Emitted from Silicon Dioxide Film in Negative-Ion Bombardment;Japanese Journal of Applied Physics;1996-09-15

5. Studies of wafer surface charging using the THOR monitor device;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

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