Studies of wafer surface charging using the THOR monitor device-Reference-Cited by-同舟云学术

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Studies of wafer surface charging using the THOR monitor device

Published:1995-03 Issue:1-2 Volume:96 Page:52-55
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Malone P.,Shull W.,England J.G.,Fotheringham I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Ion Implantation Technology - 92;England,1993

2. these Proceedings (IIT'94);England,1995

3. Charge neutralisation in the PI9000 series implanters

4. these Proceedings (IIT'94);Ito,1995

5. Part II of these Proceedings (IIT'94);Szajnowski,1995

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of short-flow MOS charging monitor for ion implantation;IEEE Transactions on Semiconductor Manufacturing;2002-11

2. Charging of substrates irradiated by particle beams;Applied Physics Letters;1997-12

3. Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomena;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

4. Optimization of MOS capacitor based short flow for monitoring ion implantation-induced charging;2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 2000 (Cat. No.00CH37072)

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