On the mixed group III and group V implantations in silicon and germanium-Reference-Cited by-同舟云学术

On the mixed group III and group V implantations in silicon and germanium

Published:1986-11 Issue:4 Volume:17 Page:325-330
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Antoncik E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference27 articles.

1. Ion Implantation in Semiconductors;Mayer,1970

2. Ion Implantation in Semiconductors;Mayer,1970

3. On the lattice location of implanted impurities in silicon

4. Chemical trends in lattice location of implanted impurities in silicon

5. Solid State Physics;Corbett,1966

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