Rapid thermal annealing of high concentration mixed As/In‐ and P/In‐implanted silicon single crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346281
Reference11 articles.
1. INFLUENCE OF n‐TYPE DOPANTS ON THE LATTICE LOCATION OF IMPLANTED p‐TYPE DOPANTS IN Si AND Ge
2. On the mixed group III and group V implantations in silicon and germanium
3. Formation of In-As Complexes in Silicon Observed by the Perturbed-Angular-Correlation Technique
4. Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy
5. Ion channeling and perturbed angular correlation (pac) studies of In-As atom Pairs in silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nanosized lead inclusions in silicon produced by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
2. Growth of heavily-doped SiGe from metallic solutions;Journal of Crystal Growth;1993-03
3. High-dose mixed Ga/As and Ga/P ion implantations in silicon single crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01
4. The chemical interaction between high‐concentration, mixed‐ion‐implanted group‐III and ‐V impurities in silicon;Journal of Applied Physics;1992-07-15
5. LPE Growth of Doped Sige Layers Using Multicomponent Phase Diagrams Calculations;MRS Proceedings;1991
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