Ion-beam-induced epitaxial crystallization of implanted and chemical vapor deposited amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference28 articles.
1. Ion Implantation and Beam Processing;Williams,1984
2. Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
3. Ion-beam induced crystallization and amorphization at a crystalline/amorphous interface in <100> silicon
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microstructure of germanium films crystallized by high energy ion irradiation;Thin Solid Films;1996-08
2. EFFECTS OF MeV ION IRRADIATION ON CRYSTALLIZATION OF AMORPHOUS Ge FILMS;Ion Beam Modification of Materials;1996
3. Evidence for diffusion-limited kinetics of ion-beam-induced epitaxial crystallization in silicon;Physical Review B;1995-12-01
4. Amorphous-crystal boundary motion and impurity redistribution during keV Ne+ ion irradiation of Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04
5. Ion-beam-induced epitaxial crystallization and amorphization in silicon;Materials Science Reports;1990-12
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