Ion-beam induced crystallization and amorphization at a crystalline/amorphous interface in <100> silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. Analysis of disorder distributions in boron implanted silicon
2. Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
3. Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition
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5. Ion Beam Induced Crystallization in Silicon;Linnros,1985
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