Author:
Cerofolini G.F.,Corni F.,Ottaviani G.,Tonini R.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
21 articles.
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1. Transmission electron microscopy study of helium implanted silicon;Microscopy of Semiconducting Materials 2003;2018-01-10
2. Monte Carlo simulations of ion channeling in crystals containing extended defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06
3. Accumulation of radiation damage in spinel crystals: Quantitative analysis and interpretation of RBS/C data;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08
4. Formation of hydrogen complexes in proton implanted silicon and their influence on the crystal damage;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
5. Using ion beam analysis in determining the mechanisms of cleavage in hydrogen ion implanted Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06