Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, G. Stingeder, J. Appl. Phys., in press.
2. Monte Carlo simulation of boron implantation into single-crystal silicon
3. Computer simulation of ion implantation into crystalline targets
4. Computer simulation studies of ion implantation in crystalline silicon
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