Electronic stopping power for Monte Carlo simulation of ion implantation into SiC-Reference-Cited by-同舟云学术

Electronic stopping power for Monte Carlo simulation of ion implantation into SiC

Published:1999-01 Issue:1-4 Volume:147 Page:68-73
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Morvan E.,Godignon P.,Berberich S.,Vellvehi M.,Millán J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

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2. Compensation implants in 6H–SiC

3. Evaluation of ohmic contacts to p-type 6H-SiC created by C and Al coimplantation

4. H. Itoh, T. Troffer, G. Pensl, Proceedings of the International Conference on Silicon Carbide, III-Nitrides and related materials, Stockholm, Sweden, 1997

5. E. Morvan, P. Godignon, J. Montserrat, J. Fernández, D. Flores, J. Millán, J.P. Chante, Proceedings of the E-MRS, Spring Meeting, Strasbourg, France, 1996, p. A-2

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1. Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With $\hbox{Al}^{+}$ Ions;IEEE Transactions on Electron Devices;2011-01

2. Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals;Journal of Applied Physics;2003-06

3. Electronic stopping of Si from a three-dimensional charge distribution;Physical Review B;2000-08-01

4. Channeling implantations of Al+ into 6H silicon carbide;Applied Physics Letters;1999-06-28