Investigation of ultra thin SiNxOy layers produced by low-energy ion implantation with NRA and channeling-RBS
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Hydrogen profiles of thin PVD silicon nitride films using elastic recoil detection analysis
2. Formation mechanism and structures of buried oxy-nitride layers produced by ion beam synthesis
3. In situ detection of rearrangement processes during electron beam annealing of ion implanted InP
4. A very narrow resonance in 18O(p, α)15N near 150 keV: Application to isotopic tracing. II. High resolution depth profiling of 18O
5. Nitrogen profiles of thin sputtered PVD silicon nitride films
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1. Energy levels of light nuclei A= 12;Nuclear Physics A;2017-12
2. Formation of micrometer sized crater shaped pits in silicon by low-energy 22Ne+ implantation and electron beam annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
3. XAFS characterization of buried SixNyOz samples;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-01
4. Influence of the Native Oxide Layer on the Silicon Surface During Initial Stages of Nitridation;Microchimica Acta;2001-09-01
5. Ion microscope investigations of non-uniform surfaces of thin SiO2 films produced by high-temperature nitridation experiments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-07
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