Charging studies using the CHARM2 wafer surface charging monitor-Reference-Cited by-同舟云学术

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Charging studies using the CHARM2 wafer surface charging monitor

Published:1993-04 Issue:1-2 Volume:74 Page:301-305
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Lukaszek W.,Dixon W.,Quek E.,Weisenberger W.,Sung Ho

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Charging studies with “CHARM”

2. Ion beam induced wafer charging

3. W. Lukaszek, J. McVittie, A. McCarthy, Presented at SRC TECHCON '90, San José, 1990.

4. G. Angel, Eaton Corporation, private communication.

5. Device Electronics for Integrated Circuits;Muller,1977

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ measurement of plasma charging on SiO2 hole bottoms and reduction by negative charge injection during etching;Applied Surface Science;2008-04

2. Oscillation and sequential behavior caused by opens in the routing in digital CMOS circuits;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1998

3. Toward a building-in reliability approach;Microelectronics Reliability;1997-01

4. Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

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