Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
13 articles.
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1. Transmission Electron Microscopy of Be Implanted Si-Doped GaAs;physica status solidi (a);2000-12
2. Damage production in GaAs during MeV ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
3. Defect development and dopant location due to elevated temperature implantation of InP with MeV zinc ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-06
4. Channeling investigations of MeV Zn implanted InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
5. Ion Implantation Induced Extended Defects in GaAs;Handbook of Compound Semiconductors;1995