The effect of recoiled oxygen on the annealing properties of Si surface layer implanted with As through SiO 2 films
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Behavior of recoiled oxygen in through-oxide arsenic-implanted silicon
2. The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si
3. Amorphous clusters associated with recoil oxygen created in As+ ion-implanted Si/SiO2 systems
4. Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si
5. Arsenic Ion‐Implanted Shallow Junction
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1. Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations;Physical Review B;2012-04-27
2. A photoacoustic study of thermal conductivity annealing curves for a silicon substrate implanted with Si ions;Electronics and Communications in Japan (Part II: Electronics);2003-09-10
3. Evaluation of Semiconductor Thin-Films through Thermal Conductivity by Photoacoustic Method;Netsu Bussei;2003
4. Photoacoustic evaluation of defects and thermal conductivity in the surface layer of ion implanted semiconductors;Materials Science and Engineering: B;2002-04
5. Monte Carlo Simulation of the Annealing Kinetics of Oxygen Recoils Formed in Through-Oxide Implants on Silicon;physica status solidi (a);1986-03-16
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