Rapid thermal annealing of the through-film silicon implantation on GaAs-Reference-Cited by-同舟云学术

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Rapid thermal annealing of the through-film silicon implantation on GaAs

Published:1991-07 Issue: Volume:59-60 Page:1003-1006
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Huang F.S.,Chen W.S.,Hsu T.M.,Lee C.W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Study of Encapsulants for Annealing GaAs

2. Multilayered encapsulation of GaAs

3. SiOxNycapped annealing for Si‐implanted GaAs

4. A high-transconductance self-aligned GaAs MESFET fabricated by through-AIN implantation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique;Japanese Journal of Applied Physics;1996-05-15

2. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995

3. Formation and characterization of shallow junctions by through-film ion implantation in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06

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