A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique
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Published:1996-05-15
Issue:Part 1, No. 5A
Volume:35
Page:2578-2582
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Hsu Wan-Thai,Tu Chuan-Cheng,Chen Wei-Su,Huang Fon-Shan
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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