Formation and characterization of shallow junctions by through-film ion implantation in GaAs-Reference-Cited by-同舟云学术

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Formation and characterization of shallow junctions by through-film ion implantation in GaAs

Published:1993-06 Issue: Volume:80-81 Page:687-690
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Shen H.L.,Xu H.L.,Xia G.Q.,Zou S.C.,Zhou Z.Y.,Jiang B.Y.,Liu X.H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Characterization of a thin Si‐implanted and rapid thermal annealedn‐GaAs layer

2. SiFx and SFx molecular ion implantations into GaAs

3. Rapid thermal annealing of the through-film silicon implantation on GaAs

4. Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High resolution XRD study of GaAs implanted with 50 MeV 120Sn ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-12

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