Fractional secondary ion yields of Be, Zn, Cr and Si in InP, GaInAs and Ga1−xAlxAs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Oxygen-concentration dependence of secondary ion yield enhancement
2. Mechanism of the SIMS matrix effect
3. Matrix effect and surface oxidation in depth profiling of AlxGa1−xAs by secondary ion mass spectrometry using O+2primary ions
4. Proc. 3rd Int. Conf. Secondary ion mass spectrometry (SIMS III);Slodzian,1981
5. Matrix calibration for the quantitative analysis of layered semiconductors by secondary ion mass spectrometry
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of secondary ion energy distributions on SIMS matrix ion intensities and relative sensitivity factors in the system GaAs/GaAlAs;Vacuum;1990-01
2. Oxygen complexes in III‐V compounds as determined by secondary‐ion mass spectrometry under cesium bombardment;Journal of Applied Physics;1989-09-15
3. Effect of matrix composition and impact angle on the fractional ion yield of Be+sputtered from oxygen‐bombarded silicon and compound semiconductors;Journal of Applied Physics;1989-06-15
4. Influence of experimental conditions on matrix effect in SIMS;Applied Surface Science;1988-08
5. Secondary ion mass spectrometry quantification of Be in AlxGa1−xAs/GaAs multilayer structures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1988-07
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