Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Mechanical property changes in sapphire by nickel ion implantation and their dependence on implantation temperature
2. Ion implantation effects in silicon carbide
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1. Positron annihilation studies on N+ implantation induced vacancy type defects and its recovery in SI: 6H- SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-10
2. Effect of nitrogen ion implantation in semi insulating 6H-SiC and recrystallization probed by Raman scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-10
3. Inductive effect of phosphorus atoms on the formation of graphite-like clusters in silicon carbide during irradiation;Journal of Nuclear Materials;2019-09
4. Structural and Optical Properties of Porous Thin Hydrogenated Amorphous Silicon Carbide Films for Optoelectronic Applications;Journal of Nanoelectronics and Optoelectronics;2019-07-01
5. Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC;Journal of Raman Spectroscopy;2019-05-27
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