The structure of the Si(100)-(4 × 3) In surface studied by STM and ICISS
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth
2. Evolution of the Si(100)‐2×2‐In reconstruction
3. Structure of low-coverage phases of Al, Ga, and In on Si(100)
4. Applications of ab initio quantum molecular dynamical relaxation: Silicon(111)‐5×5 surface reconstruction and aluminum deposited on silicon(100)
5. Structure of the Si(100)-(2×2)In surface
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Activation energy of surface diffusion and terrace width dynamics during the growth of In(4×3) on Si(100)-(2×1) by femtosecond pulsed laser deposition;Journal of Applied Physics;2008-05
2. Photoelectron holography of the In-terminatedSi(001)−(4×3)surface;Physical Review B;2001-11-15
3. Solving the structural model for the Si(001)–In(4×3) surface;Applied Physics Letters;2001-07-09
4. First-principles calculations of the atomic structure of the In-inducedSi(001)−(4×3)reconstruction;Physical Review B;2001-06-07
5. Si(001)/In-4×3 surface: a first principles total energy calculation;Surface Science;2001-06
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