Si(001)/In-4×3 surface: a first principles total energy calculation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth
2. Initial stage growth of In and A1 on a single-domain Si(001)2 × 1 surface
3. Surface core levels of In adsorption on Si(001)2×1
4. Structural model for theSi(100)4×3−Insurface phase
5. Indium-induced reconstructions of the Si(100) surface
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Random and ordered arrays of surface magic clusters;International Reviews in Physical Chemistry;2008-04
2. Ab initiomolecular dynamics study on the formation process of Al layers on Si(001) surface;Modelling and Simulation in Materials Science and Engineering;2004-09-17
3. Magic nanoclusters of group III metals on Si(100) surface;e-Journal of Surface Science and Nanotechnology;2003
4. Atomic structure of the indium-inducedGe(001)(n×4)surface reconstruction determined by scanning tunneling microscopy andab initiocalculations;Physical Review B;2002-07-08
5. First principles total energy calculations of the Al induced Si(001)-(3×4) reconstruction;Surface Science;2002-04
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