First-principles calculations of the atomic structure of the In-inducedSi(001)−(4×3)reconstruction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.245325/fulltext
Reference22 articles.
1. Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth
2. Indium-induced reconstructions of the Si(100) surface
3. Structure of the Si(100)-(2×2)In surface
4. Reconstruction, step-bunching and faceting of a vicinal Si( 100) surface induced by indium adsorption
5. Direct determination of In-dimer orientation of Si(001)2 × 3-In and 2 × 2-In surfaces
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