Argon ion implantation gettering of large area p-n junctions and schottky diodes
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference5 articles.
1. Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in Si
2. Precipitation‐Induced Currents and Generation‐Recombination Currents in Intentionally Contaminated Silicon P+N Junctions
3. Minority carrier lifetime in silicon after Ar+ and Si+ implantation
4. Reduction of Defects in Ion Implanted Bipolar Transistors by Argon Back Side Damage
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer;Solid-State Electronics;2018-10
2. Comparison of Gettering Techniques by Means of Intentional Quantitative Cu Contamination;Japanese Journal of Applied Physics;1988-07-20
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