Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation-Reference-Cited by-同舟云学术

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Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation

Published:1989-03 Issue:1-4 Volume:39 Page:461-465
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Wang Y.G.,Ashok S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon

2. Modification of Schottky barriers in silicon by reactive ion etching with NF3

3. S. Ashok, H. Krautle, H. Beneking and A. Mogro-Campero 126(1985)251.

4. Argon‐ion implantation damage studies in silicon Schottky barriers using anodic oxidation/etching

5. Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01

2. Ion milling damage in InP and GaAs;Journal of Applied Physics;1990-09-15

3. Ion Implantation in Microelectronics—III-V Compounds;IETE Journal of Research;1990-05

4. Ion Milling Damage in InP and GaAs;MRS Proceedings;1990

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