Hydrogen implantation into (100) silicon: A study of the released damage-Reference-Cited by-同舟云学术

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Hydrogen implantation into (100) silicon: A study of the released damage

Published:1989-03 Issue:1-4 Volume:39 Page:381-385
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Meda L.,Cerofolini G.F.,Dierckx R.,Mercurio G.,Servidori M.,Cembali F.,Anderle M.,Canteri R.,Ottaviani G.,Claeys C.,Vanhellemont J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation

2. Diffusion Mechanisms and Thermal-Equilibrium Defects in Silicon and Germanium

3. Hydrogen depth profiling using SIMS—Problems and their solutions

4. Proc. Symp.W, MRS Fall Meeting;Vanhellemont,1987

5. Double-crystal X-ray diffraction analysis of low-temperature ion implanted silicon

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen plasma irradiation and postannealing effects on crystalline quality at vicinal Si (100) surface;Applied Surface Science;2000-01

2. Hydrogen precipitation in highly oversaturated single-crystalline silicon;Physica Status Solidi (a);1995-08-16

3. Vacancy-hydrogen interaction in H-implanted Si studied by positron annihilation;Physical Review B;1994-03-15

4. Radiation effects in bulk silicon;Radiation Effects and Defects in Solids;1994-01

5. Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon;Physical Review B;1992-07-15

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