Diffusion Mechanisms and Thermal-Equilibrium Defects in Silicon and Germanium-Reference-Cited by-同舟云学术

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Diffusion Mechanisms and Thermal-Equilibrium Defects in Silicon and Germanium

Published:1987-01 Issue: Volume:15-18 Page:369-388
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Frank W.¹,Stolwijk Nicolaas²

Affiliation:

1. Max Planck Institut für Metallforschung

2. Westfälische Wilhelms-Universität Münster

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.15-18.369.pdf

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Grown-in Defects in Germanium;Germanium-Based Technologies;2007

2. Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth;Materials Science in Semiconductor Processing;2006-08

3. Simulation of point defect diffusion in germanium;Physica B: Condensed Matter;2006-04

4. Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon;Solid State Phenomena;2005-12

5. Microscopic picture of the single vacancy in germanium;Physical Review B;2000-01-15

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