Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth-Reference-Cited by-同舟云学术

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Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth

Published:2006-08 Issue:4-5 Volume:9 Page:465-470
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Śpiewak P.,Kurzydłowski K.J.,Vanhellemont J.,Clauws P.,Wabiński P.,Młynarczyk K.,Romandic I.,Theuwis A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Defect engineering of Czochralski single-crystal silicon

2. IMD—a molecular dynamics program and applications;Roth,2000

3. Comparative study of silicon empirical interatomic potentials

4. Computer simulation of local order in condensed phases of silicon

5. Modeling solid-state chemistry: Interatomic potentials for multicomponent systems

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1. Nanoscale modification of silicon and germanium surfaces exposed to low-energy helium plasma;Scientific Reports;2019-07-12

2. Crystalline structures and defects in liquid GaN during rapid cooling processes;Materials Science in Semiconductor Processing;2018-02

3. Jan Vanhellemont - 35 years of materials research in microelectronics;physica status solidi (c);2016-06-03

4. Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter;Astroparticle Physics;2013-04

5. Kinetic lattice Monte Carlo simulation study on vacancy diffusion in germanium;Current Applied Physics;2009-03

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