RBS study on bombardment-induced redistribution of copper impurities in silicon using neon, oxygen and nitrogen ion beams at different impact angles-Reference-Cited by-同舟云学术

RBS study on bombardment-induced redistribution of copper impurities in silicon using neon, oxygen and nitrogen ion beams at different impact angles

Published:1990-01 Issue:1-4 Volume:45 Page:219-222
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Menzel N.,Wittmaack K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low energy O2+ and N2+ beam-induced profile broadening effects in Si;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-05

4. The behaviour of Si and CoSi2 during low energy nitrogen bombardment, with and without O2-flooding;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-06

5. Stoichiometry changes during low energy oxygen bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05