Measurement of sample charging during sputtering of III–V materials and devices-Reference-Cited by-同舟云学术

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Measurement of sample charging during sputtering of III–V materials and devices

Published:1994-08 Issue:3 Volume:93 Page:252-260
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Downey S.W.,Emerson A.B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis;Wilson,1989

2. Fast atom beam bombardment secondary ion mass spectrometry: FAB-SIMS

3. Laser induced desorption of ions from insulators near the ablation threshold

4. Investigation of surface charging of insulating materials due to secondary particle emission using a new dual beam instrument

5. Sputter‐initiated resonance ionization spectroscopy: A matrix‐independent sub‐parts‐per‐billion sensitive technique applied to diffusion studies in SiO2–InP interfaces

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Imaging problems on insulators: What can be learnt from NC-AFM modelling on CaF2?;Applied Physics A;2001-03

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