Distribution of strain in Ge ion implanted silicon measured by high resolution X-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. X‐ray study of lattice strain in boron implanted laser annealed silicon
2. Kinematical x‐ray diffraction in nonuniform crystalline films: Strain and damage distributions in ion‐implanted garnets
3. Strain in GaAs by low‐dose ion implantation
4. Nonlinear strain effects in ion‐implanted GaAs
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1. Retardation of strain relaxation in Si/SiGe/Si heterostructures during high temperature oxidation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-10
2. An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
3. Analysis of X-ray rocking curves in (001) silicon crystals implanted with nitrogen by plasma immersion ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
4. Plasma ion implantation of nitrogen into silicon: high resolution x-ray diffraction;Brazilian Journal of Physics;1999-12
5. Mechanical strain and electrically active defects in Si implanted with Ge+ions;Semiconductor Science and Technology;1999-01-01
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