Reduced reverse temperature of ion beam induced amorphization/ crystallization for intermittent beam irradiation of silicon?
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. Ion-beam-induced epitaxial crystallization and amorphization in silicon
2. Ion-beam-induced crystallization and amorphization of silicon
3. Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon
4. Ion-beam-assisted growth of doped Si layers
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1. Impact of fluence-rate related effects on the sputtering of silicon at elevated target temperatures;Journal of Applied Physics;2009-02-15
2. SiC precipitates formed in Si by simultaneous dual beam implantation of C+ and Si+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
3. Status and open problems in modeling of as-implanted damage in silicon;Materials Science in Semiconductor Processing;2003-02
4. Comparison between the reversal temperature of IBIEC–IBIIA transition and critical temperatures of damage formation in ion irradiated InP and InAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-02
5. Comparison of nucleation and growth of the crystalline and amorphous phase during MeV-ion irradiation of amorphous/crystalline interfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
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