Comparison between the reversal temperature of IBIEC–IBIIA transition and critical temperatures of damage formation in ion irradiated InP and InAs-Reference-Cited by-同舟云学术

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Comparison between the reversal temperature of IBIEC–IBIIA transition and critical temperatures of damage formation in ion irradiated InP and InAs

Published:2000-02 Issue:2 Volume:160 Page:257-261
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Wendler E,Dharmarasu N,Glaser E

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. A model for the formation of amorphous Si by ion bombardment

2. Effect of temperature and recoil-energy spectra on irradiation-induced amorphization in Ca2La8(SiO4)6O2

3. Ion mass and temperature dependence of damage production in ion implanted InP

4. The radiation-induced crystalline-to-amorphous transition in zircon

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1. Extreme ion irradiation of oxide nanoceramics: Influence of the irradiation spectrum;Acta Materialia;2018-01

2. Radiation endurance in Al2O3 nanoceramics;Scientific Reports;2016-09-22

3. Ion-beam induced effects in multi-layered semiconductor systems;physica status solidi (b);2016-07-15

4. Damage Formation, Amorphization and Crystallization in Semiconductors at Elevated Temperatures;Ion Beam Modification of Solids;2016

5. Primary Processes of Damage Formation in Semiconductors;Ion Beam Modification of Solids;2016

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