The chemical state of iron ions implanted into silicon carbide-Reference-Cited by-同舟云学术

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The chemical state of iron ions implanted into silicon carbide

Published:1991-07 Issue: Volume:59-60 Page:1362-1365
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

McHargue Carl J.,Perez Alain,McCallum J.C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. Silicon Carbide — 1973;Marsh,1974

2. Structural alterations in SiC as a result of Cr+ and N+ implantation

3. Surface softening in silicon by ion implantation

4. Ion beam modification of 6H/15R SiC crystals

5. Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor;Journal of Applied Physics;2020-05-14

2. The origin of ferromagnetism in57Fe ion-implanted semiconducting 6H-polytype silicon carbide;Journal of Physics: Condensed Matter;2006-10-13

3. Ion beam modification of ceramics;Materials Science and Engineering: A;1998-09

4. Compositions and Chemical Bonding in Ceramics by Quantitative Electron Energy-Loss Spectrometry;MRS Proceedings;1994

5. Ion implantation effects in silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01

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