Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor-Reference-Cited by-同舟云学术

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Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor

Published:2020-05-14 Issue:18 Volume:127 Page:183901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Diallo L.¹,Fnidiki A.¹^ORCID,Lechevallier L.¹²,Juraszek J.¹^ORCID,Viret M.³,Marteau M.⁴,Eyidi D.⁴,Declémy A.⁴

Affiliation:

1. Normandie University, UNIROUEN, INSA Rouen, CNRS, GPM, 76000 Rouen, France

2. Département de GEII, Université de Cergy-Pontoise, rue d’Eragny, Neuville sur Oise, 95031 Cergy-Pontoise, France

3. Service de Physique de l’Etat Condensé (DSM/IRAMIS/SPEC), UMR 3680 CNRS, Bât. 772, Orme des Merisiers, CEA Saclay, 91191 Gif sur Yvette, France

4. Institut PPRIME, UPR 3346 CNRS, Université de Poitiers, ENSMA, SP2MI, téléport 2, 11 Bvd M. et P. Curie, 86962 Futuroscope, Chasseneuil, France

Funder

European Regional Development Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0005061

Reference34 articles.

1. Diluted magnetic III-V semiconductors

2. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

3. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

4. A story of high-temperature ferromagnetism in semiconductors

5. Ab initiostudies of magnetism in transition-metal-doped silicon carbide

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local strain-induced ferromagnetism in inhomogeneous Fe-implanted silicon carbide;Solid State Sciences;2022-04

2. The high Curie temperature and long-range ferromagnetism in Mn-doped 3C-SiC: a study using first-principles calculation;Journal of the Korean Physical Society;2021-08-02

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