Author:
Tamura M.,Shukuri S.,Ichikawa M.,Wada Y.,Ishitani T.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
8 articles.
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1. Dwell-time dependence of irradiation damage in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-05
2. Damage production in semiconductor materials by a focused Ga+ ion beam;Journal of Applied Physics;2000-11-15
3. Damage formation and annealing of ion implantation in Si;Materials Science Reports;1991-04
4. Dynamic disordering process in Si during high dose rate B+ ion beam implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06
5. Precise Measurement of a Focused Ion Beam Profile;Journal of The Electrochemical Society;1987-06-01