Recent developments at HVEE
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. US patent #5.315.118.
2. The HVEE Tandetron Line; new developments and design considerations
3. US patent #5.247.263.
4. A versatile high intensity negative ion source
5. Incorporation of accelerated low‐energy (50–500 eV) In+ions in Si(100) films during growth by molecular‐beam epitaxy
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. RBS and PIXE data analysis by two dimensional correlation mapping techniques: On the effects of ion irradiation and sulfonation on poly(ether ether ketone) membranes;X-Ray Spectrometry;2020-10-22
2. Utilization of Si wafers as a supporting material for in-vacuum PIXE analysis of aqueous solutions;Applied Radiation and Isotopes;2020-06
3. The Bucharest 1 MV HVEE Accelerator Mass Spectrometer extended for measurements of hydrogen isotopes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-12
4. Depth profiling of titanium nitride thin films deposited on stainless steel utilizing combined EBS and NRA techniques;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-09
5. Setting up of in-vacuum PIXE system for direct elemental analysis of thick solid environmental samples;Applied Radiation and Isotopes;2016-04
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