Comparison of MeV-implanted GaAs and InP
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. MeV B compensation implants inton‐type GaAs and InP
2. Ion-beam induced epitaxial crystallization of III–V compound semiconductors
3. The microstructure of short-time-annealed Se+ -implanted GaAs
4. Investigation of Se+‐implanted GaAs layers by temperature‐dependent dechanneling
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1. X-ray diffraction studies of GaAs implanted with 1.5MeV Se+ ions;Vacuum;2005-05
2. Peculiarities of the track formation in InP and GaAs crystals;Vacuum;2005-05
3. Comparative study of MeV C[sup +] and C[sub 2][sup +] ion implantation in GaAs(100): Surface roughness and evaluation of lattice strain;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
4. Compound Semiconductors: Defect Evolution;Encyclopedia of Materials: Science and Technology;2001
5. Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs;Journal of Applied Physics;2000-01-15
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