X-ray diffraction studies of GaAs implanted with 1.5MeV Se+ ions
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference22 articles.
1. Double crystal x‐ray analysis of strain distribution in rapid thermal annealed, S‐implanted GaAs
2. Production of amorphous zones in GaAs by the direct impact of energetic heavy ions
3. Critical temperature and ion flux dependence of amorphization in GaAs
4. Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
5. Dose rate effects on damage accumulation in Si+‐implanted gallium arsenide
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1. Characterization ofAIIIBVsuperlattices by means of synchrotron diffraction topography and high-resolution X-ray diffraction;Journal of Applied Crystallography;2017-07-27
2. Deep boron diffusion induced surface damage in silicon;Materials Letters;2016-05
3. Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+and 1 MeV Al+ions;X-Ray Spectrometry;2015-07-15
4. Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction;Journal of Physics: Condensed Matter;2010-11-15
5. Strain-profile determination in ion-implanted single crystals using generalized simulated annealing;Journal of Applied Crystallography;2010-09-10
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