Author:
Bachmann T.,Wesch W.,Gärtner K.,Bartsch H.
Subject
General Physics and Astronomy
Cited by
9 articles.
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1. Electrical and optical properties of oxygen‐ion hot‐implanted GaAs layers;Applied Physics Letters;1994-05-09
2. Comparison of MeV-implanted GaAs and InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
3. Annealing of Se+-Implanted GaAs Encapsulated with As-Doped a-Si:H;Japanese Journal of Applied Physics;1993-10-15
4. Channeling and TEM investigations of pulse electron beam annealed GaAs implanted with Pb;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
5. Defect nucleation in weakly damaged ion implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04