Ion implantation and diffusion of Al in a system
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Electrical activity of aluminum implanted in silicon: An interface problem in high‐power devices
2. Diffusion and outdiffusion of aluminium implanted into silicon
3. Al‐O complex formation in ion implanted Czochralski and floating‐zone Si substrates
4. Al‐O interactions in ion‐implanted crystalline silicon
5. Diffusion and Incorporation of Aluminum in Silicon
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1. Structural Properties of Al–O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density;ACS Applied Materials & Interfaces;2018-08-15
2. Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process;IEEE Transactions on Electron Devices;2018-02
3. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide;Scientific Reports;2017-04-20
4. The Effects of an Oxide Layer on the Kinetics of Metal-Induced Crystallization of a-Si:H;Journal of The Electrochemical Society;2005
5. Diffusion of 18 elements implanted into thermally grown SiO[sub 2];Journal of Applied Physics;2003
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