Author:
La Ferla A.,Torrisi L.,Galvagno G.,Rimini E.,Ciavola G.,Carnera A.,Gasparotto A.
Subject
Physics and Astronomy (miscellaneous)
Cited by
19 articles.
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1. Evidence of sub-10 nm aluminum-oxygen precipitates in silicon;Nanotechnology;2016-04-13
2. Dopants;Computational Microelectronics;2004
3. Trapping of aluminium by dislocation loops in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-05
4. Study of the diffusion behaviour of aluminium in silicon up to 900°C by nuclear reaction analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
5. Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient;Journal of Applied Physics;2000-03