Effects of MeV ion bombardment and thermal annealing on Ga1−x InxAs/GaAs-Reference-Cited by-同舟云学术

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Effects of MeV ion bombardment and thermal annealing on Ga1−x InxAs/GaAs

Published:1989-02 Issue: Volume:37-38 Page:965-969
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Wie Chu R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Advanced Application of Ion Implantation;Dietrich,1985

2. Ion Implantation in Semiconductors;Mayer,1970

3. Defect strain fields in epitaxial GaAs

4. C.R. Wie, G. Burns, F.H. Dacol, G.D. Pettit and J.M. Woodall, unpublished.

5. Phonon shifts and strains in strain‐layered (Ga1−xInx)As

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resolution XRD analysis of swift heavy ion irradiated InGaAs/GaAs heterostructures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-03

2. Kinematical x‐ray diffraction model with a new boundary condition for analysis of Bragg‐peak profiles of layered crystals;Journal of Applied Physics;1991-05

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