Phonon shifts and strains in strain‐layered (Ga1−xInx)As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98300
Reference13 articles.
1. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
2. Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces
3. Lattice relaxation of InAs heteroepitaxy on GaAs
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