Etching of SiO2 in SF6 plasmas: the role of ions and electrons in etching mechanisms
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference8 articles.
1. Magnetic Multipole Containment of Large Uniform Collisionless Quiescent Plasmas
2. 7th Int Symp on Plasma Chemistry;Petit,1985
3. Microwave multipolar plasmas: a possible solution for etching in microelectronics?
4. Troisième Symp Int sur la Gravure Sèche et le Dèpôt Plasma en Microélectronique;Petit,1985
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Multiphoton ionization detection of SiF radicals in SiF4 plasmas;Chemical Physics Letters;2000-06
2. In situ monitoring of GaAs etched with a Cl2/Ar discharge in an electron cyclotron resonance source;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
3. Magnetic multipole‐based reactive ion etching reactor;Applied Physics Letters;1992-05-11
4. Self‐biasing effects on plasma etching characteristics of Si and SiO2;Applied Physics Letters;1988-07-04
5. A Parametric Study of the Etching of Silicon in SF6Microwave Multipolar Plasmas: Interpretation of Etching Mechanisms;Japanese Journal of Applied Physics;1987-06-20
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