In situ monitoring of GaAs etched with a Cl2/Ar discharge in an electron cyclotron resonance source-Reference-Cited by-同舟云学术

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In situ monitoring of GaAs etched with a Cl2/Ar discharge in an electron cyclotron resonance source

Published:1995-03 Issue:2 Volume:13 Page:253
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kahaian D. J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Damage Induced by Dry Etching;Handbook of Advanced Plasma Processing Techniques;2000

2. Mass Spectrometric Characterization of Plasma Etching Processes;Handbook of Advanced Plasma Processing Techniques;2000

3. In Situ Etch Rate Measurements by Alpha-Particle Energy Loss;MRS Proceedings;1999

4. Precise etch stop for emitter etching of self-aligned heterojunction bipolar transistors;Applied Surface Science;1997-06

5. Effects of graded superlattice on endpoint detection for low damage heterojunction bipolar transistor etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-05

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