Triplasmatron sources for broad and reactive ion beams
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference15 articles.
1. Selective Reactive Ion Beam Etching of SiO2 over Polycrystalline Si
2. Plasma etching in a multipolar discharge
3. Interface states induced in silicon by tungsten as a result of reactive ion beam etching
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Development of a triplasmatron ion source for the generation of SF5+ and F− primary ion beams on an ion microscope secondary ion mass spectrometry instrument;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-05
2. Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited)a);Review of Scientific Instruments;1992-05
3. An ECR microwave plasma cathode for ion sources with electrostatic reflex containment;Review of Scientific Instruments;1992-04
4. Analysis of large‐area beam attacks on surfaces and testing of etching reactions;Review of Scientific Instruments;1992-01
5. Primary electron orbit calculation in a bucket‐type ion source for ion milling;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-07
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