Interface states induced in silicon by tungsten as a result of reactive ion beam etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332236
Reference14 articles.
1. Si and SiO2Etching Characteristics by Fluorocarbon Ion Beam
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4. Investigations on the damage caused by ion etching of SiO2 layers at low energy and high dose
5. Radiation damage in silicon dioxide films exposed to reactive ion etching
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1. Performance characteristics of a capacitively coupled 3 cm rf ion sourcea);Review of Scientific Instruments;1992-05
2. References;Thin Films by Chemical Vapour Deposition;1990
3. Carbon contaminant in the ion processing of aluminum oxide film;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-05
4. Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification;Revue de Physique Appliquée;1989
5. Elemental Analysis of Treated Surfaces;Plasma Diagnostics;1989
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