A consideration of the effect of reactor parameters on the characteristics of layers prepared by low pressure chemical vapour deposition
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference34 articles.
1. Influence of crystal structure on the luminescence of ions with s2 configuration
2. Polysilicon growth kinetics in a low pressure chemical vapour deposition reactor
3. Semi-insulating polysilicon (SIPOS) deposition in a low pressure CVD reactor
4. M L Hitchman and J Kane, unpublished results.
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2. Predictable Simple Reaction Model for Poly-Silicon LPCVD Process;ECS Transactions;2009-09-25
3. Predictive Model Extraction for Polysilicon Low-Pressure Chemical Vapor Deposition in a Commercial Scale Reactor;Journal of The Electrochemical Society;2007
4. Some Kinetic Considerations of Chemical Vapour Deposition (CVD) Processes;Applications of Kinetic Modelling;1999
5. Studies of the effects of NF3on the growth of polysilicon films by low-pressure CVD. Part 3.—Effect on composition;J. Mater. Chem.;1994
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